v rrm = 150 v - 200 v i f(av) = 200 a features ? high surge capability three tower package ? isolation type package ? electrically isolated base plate ? not esd sensitive parameter symbol mbrt200150(r) unit repetitive peak reverse voltage v rrm 150 v rms reverse voltage v rms 106 v dc blocking voltage v dc 150 v conditions 200 silicon power schottk y diode mbrt200150 thru mbrt200200r 200 141 mbrt200200(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) ? types from 150 v to 200 v v rrm dc blocking voltage v dc 150 v operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol mbrt200150(r) unit average forward current (per pkg) i f(av) 200 a maximum instantaneous forward voltage (per leg) 0.88 1 10 30 thermal characteristics thermal resistance, junction- case (per leg) r jc 0.45 c/w -55 to 150 200 1 mbrt200200(r) 0.45 t j = 150 c 0.92 30 200 1500 1500 electrical characteristics, at tj = 25 c, unless otherwise specified ma v t j = 25 c i fm = 100 a, t j = 25 c conditions -55 to 150 t c = 125 c a t j = 100 c 10 maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbrt200150 thru mbrt200200r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbrt200150 thru mbrt200200r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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